Die to die interface circuit

ABSTRACT

Disclosed herein are related to an integrated circuit including multiple dies stacked along a direction. In one aspect, the integrated circuit includes a first die, a second die, and a third die stacked along the direction. In one aspect, the first die includes a first interface circuit to generate a signal. In one aspect, the second die includes a second interface circuit to receive the signal from the first interface circuit and generate a replicate signal of the signal. In one aspect, the third die includes a third interface circuit to receive the replicate signal from the second interface circuit.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of U.S. ProvisionalApplication No. 63/074,153, filed Sep. 3, 2020, entitled “FLEXIBLEHIGH-SPEED SYNCHRONOUS INTERFACE DESIGN IN 3DIC STACK”, which isincorporated herein by reference in its entirety for all purposes.

BACKGROUND

The recent trend in miniaturizing integrated circuits (ICs) has resultedin smaller devices which consume less power yet provide morefunctionality at higher speeds than before. In one aspect, theminiaturization in the ICs is achieved by advancement in fabricationprocesses. For example, multiple dies or integrated circuits can bestacked to improve storage or process capabilities.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a diagram of an integrated circuit including multiple diesstacked along a direction, in accordance with one embodiment.

FIG. 2 is a diagram of an integrated circuit including multiple diesstacked along a direction, in accordance with one embodiment.

FIG. 3 is a diagram of a die-to-die interface circuit and metal railsconnected to the die-to-die interface circuit, in accordance with oneembodiment.

FIG. 4 is a schematic diagram showing connections of die-to-dieinterface circuits, in accordance with some embodiments.

FIG. 5 is a flowchart showing a method of propagating a signal throughmultiple dies stacked along a direction, in accordance with someembodiments.

FIG. 6 is a diagram showing a device to perform a circuit simulation ofan integrated circuit including multiple dies stacked along a direction,in accordance with some embodiments.

FIG. 7 is a flowchart showing a method of performing a circuitsimulation of an integrated circuit including multiple dies stackedalong a direction, in accordance with some embodiments.

FIG. 8A is a diagram showing multiple simulation results of a single dieacross different process corners, in accordance with some embodiments.

FIG. 8B is a diagram showing a timing model including multiplesimulation results of a single die, in accordance with some embodiments.

FIG. 8C is a diagram showing timing models in cascade, in accordancewith some embodiments.

FIG. 9 is a flowchart of a method of manufacturing an integratedcircuit, in accordance with some embodiments.

FIG. 10 is a block diagram of a system of generating an IC layoutdesign, in accordance with some embodiments.

FIG. 11 is a block diagram of an IC manufacturing system, and an ICmanufacturing flow associated therewith, in accordance with at least oneembodiment of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In accordance with some embodiments, an integrated circuit includingmultiple dies stacked along a direction is disclosed. In one aspect, theintegrated circuit includes a first die, a second die, and a third diestacked along the direction. In one aspect, the first die includes afirst interface circuit to generate a signal. In one aspect, the seconddie includes a second interface circuit to receive the signal from thefirst interface circuit and generate a replicate signal of the signal.The replicate signal may contain the same information as the signalreceived but may be delayed by a certain amount. In one aspect, thethird die includes a third interface circuit to receive the replicatesignal from the second interface circuit. The second interface circuitmay propagate the signal between the first interface circuit and thesecond interface circuit, while electrically isolating or separatingelectrical loads (e.g., resistive load, capacitive load, etc.) of metalrails in different dies.

Advantageously, the disclosed integrated circuit can achieve speedimprovement. By employing interface circuits to generate a replicatesignal to transmit to a subsequent die while electrically isolating orseparating electrical loads of metal rails in different dies, capacitiveloading of metal rails through multiple dies can be reduced. By reducingthe capacitive loading, speed of communication among different dies ofthe integrated circuit can be enhanced.

In accordance with some embodiments, a method of simulating anintegrated circuit including multiple dies stacked along a direction isdisclosed. In some embodiments, the method includes performing, by aprocessor, a first simulation for a die of the integrated circuit acrossprocess corners. In some embodiments, the method includes generating, bythe processor, a timing model of the die according to the firstsimulation. The timing model may be an aggregation of simulation resultsacross different process corners. In some embodiments, the methodincludes performing, by the processor, a second simulation for multipledies of the integrated circuit stacked along the direction. Each of themultiple dies may be represented by the timing model to perform thesecond simulation.

Advantageously, the disclosed method can perform circuit simulation ofan integrated circuit including multiple dies stacked along a directionin an efficient manner. In one aspect, electrical loads (e.g.,capacitive load, resistive load, etc.) of metal rails of multiple diesof the integrated circuit are electrically isolated or separated amongeach other through interface circuits of the multiple dies, such thateach die can be modeled independently. Hence, circuit simulation of asingle die can be performed for various process corners to generate atiming model, and the timing model can be applied or utilized forperforming circuit simulation of multiple dies stacked along thedirection. By performing circuit simulation of multiple dies based onthe timing model of the single die rather than performing exhaustivecircuit simulation of multiple dies across various process corners,computational resources (e.g., storage space and processing power) forperforming circuit simulation can be conserved.

FIG. 1 is a diagram of an integrated circuit 100A including multipledies 110A . . . 110E stacked along a direction (e.g., Y-direction), inaccordance with one embodiment. In some embodiments, the integratedcircuit 100A includes conductive bumps 165. Each conductive bump 165 mayinclude conductive materials (e.g., metal). Each conductive bump 165 mayelectrically couple between two corresponding dies 110. Throughconductive bumps 165, different dies 110A . . . 110E may communicateamong each other. In some embodiments, the integrated circuit 100Aincludes more, fewer, or different components than shown in FIG. 1. Forexample, the integrated circuit 100A includes a different number of dies110 stacked along the direction (e.g., Y-direction) than shown in FIG.1.

In some embodiments, each die 110 includes at least two layers 115, 120.The layer 115 (e.g., also referred to as a “back layer 115” herein) maybe a semiconductor layer, in which one or more transistors can beformed. For example, metal oxide semiconductor field effect transistor(MOSFET), gate all around field effect transistor (GAAFET), fin fieldeffect transistor (FinFET) or any combination of them can be formed inthe semiconductor layer 115. The layer 120 (also referred to as a “frontlayer 120” herein) may be an insulating layer to protect one or moretransistors of the semiconductor layer 115. In some embodiments, thelayer 115 is disposed or stacked above the layer 120 along the direction(e.g., Y-direction). In some embodiments, the layer 120 is disposed orstacked above the layer 115 along the direction (e.g., Y-direction).

In some embodiments, each die 110 includes metal rails 135, 155 and adie-to-die interface circuit 150. The metal rails 135, 155 mayvertically extend along the Y-direction. The metal rail 135 may extendthrough the layer 115 and electrically couple between a conductive bump165 and the die-to-die interface circuit 150. The metal rail 155 mayextend through the layer 120 and electrically couple between asubsequent conductive bump 165 and the die-to-die interface circuit 150.The die-to-die interface circuit 150 (also referred to as an “interfacecircuit 150” herein) may be formed or disposed in the layer 115. In oneaspect, the interface circuit 150 is a circuit that interfaces betweeni) one or more circuits of the die 110 and ii) other circuits indifferent dies. For example, the interface circuit 150 may receive oneor more signals through the metal rail 135, the metal rail 155, or acombination of them, and store the received one or more signals.According to the stored one or more signals, one or more circuits in thedie 110 may perform various computations. For example, the interfacecircuit 150 may generate one or more signals and transmit the one ormore signals through the metal rail 135, the metal rail 155, or acombination of them.

In this configuration, the interface circuits 150 may propagate a signalthrough the metal rails 135, 155 of different dies 110 with improvedoperating speed. In one aspect, an interface circuit 150 may receive asignal through one of the metal rails 135, 155 and transmit a replicatesignal of the signal through the other of the metal rails 135, 155,while electrically isolating between electrical loads (e.g., capacitiveload, resistive load, etc.) of the metal rails 135, 155. By electricallyisolating between electrical loads of the metal rails 135, 155, themetal rails 135, 155 of multiple dies 110 may have reduced capacitiveloading. By reducing capacitive loading, a signal can be exchanged orpropagated through different dies 110 stacked along the direction (e.g.,Y-direction) with improved speed.

FIG. 2 is a diagram of an integrated circuit 100B including multipledies 110A . . . 110E stacked along the direction (e.g., Y-direction), inaccordance with one embodiment. The integrated circuit 100B of FIG. 2 issimilar to the integrated circuit 100A of FIG. 1, except each of thedies 110D, 110E has the layer 120 disposed above the layer 115 along thedirection (e.g., Y-direction). Accordingly, the layer 120 of the die115C and the layer 120 of the die 110D may face other. Switching theorder of the layers 120, 115 may provide flexibility in stackingdifferent dies 110.

FIG. 3 is a diagram of a die-to-die interface circuit 150 and metalrails 135, 155 connected to the die-to-die interface circuit 150, inaccordance with one embodiment. In some embodiments, the interfacecircuit 150 includes IO_back port 350, IO_front port 360, Data_in port310, Data_out port 320, Is_front_to_back port 330, and Is_data_en port340. In one aspect, the interface circuit 150 may receive controlsignals through the Is_front_to_back port 330 and the Is_data_en port340, and transmit or receive one or more signals through the IO_backport 350, IO_front port 360, Data_in port 310, Data_out port 320. Insome embodiments, the interface circuit 150 can be replaced by adifferent component or a circuit that can perform the functionality ofthe interface circuit 150 described herein.

In some embodiments, the interface circuit 150 includes the IO_back port350 and the IO_front port 360 electrically coupled to different dies110. In one configuration, the IO_back port 350 is connected to themetal rail 135. Through the metal rail 135, the interface circuit 150may receive a signal from or transmit a signal to another interfacecircuit 150 of a different die 110 at the IO_back port 350. In oneconfiguration, the IO_front port 360 is connected to the metal rail 155.Through the metal rail 155, the interface circuit 150 may receive asignal from or transmit a signal to another interface circuit 150 of adifferent die 110 at the IO_front port 360.

In some embodiments, the interface circuit 150 includes the Data_in port310 and the Data_out port 320 electrically coupled to one or morecircuits within the same die 110. The interface circuit 150 may beconnected to one or more circuits at the Data_in port 310 and theData_out port 320 through metal rails extending within the die 110, forexample, along the X-direction. At the Data_in port 310, the interfacecircuit 150 may receive a signal from one or more circuits within thesame die 110. At the Data_out port 320, the interface circuit 150 maytransmit a signal to one or more circuits within the same die 110.

In some embodiments, the interface circuit 150 includes theIs_front_to_back port 330 and the Is_data_en port 340 coupled to acontroller (not shown). The controller may be disposed on the same die110 with the interface circuit 150 or may be disposed on a different die110. The interface circuit 150 may be connected to the controllerthrough one or more metal rails. At the Is_front_to back port 330 andthe Is_data_en port 340, the interface circuit 150 may receive controlsignals from the controller, and receive signals from or output signalsat the IO_back port 350, IO_front port 360, Data_in port 310, Data_outport 320, according to the control signals. For example, in response toa control signal having a low state ‘0’ at the Is_data_en port 340 and acontrol signal having a high state ‘1’ at the Is_front_to_back port 330,the interface circuit 150 may receive a signal (e.g., data signal orclock signal) at the IO_front port 360 through the metal rail 155, andgenerate, at the IO_back port 350 and the Data_out port 320, replicatesignals of the received signal. For example, in response to a controlsignal having a low state ‘0’ at the Is_data_en port 340 and a controlsignal having a low state ‘0’ at the Is_front_to_back port 330, theinterface circuit 150 may receive a signal (e.g., data signal or clocksignal) at the IO_back port 350 through the metal rail 135, andgenerate, at the IO_front port 360 and the Data_out port 320, replicatesignals of the received signal. For example, in response to a controlsignal having a high state ‘1’ at the Is_data_en port 340, the interfacecircuit 150 may receive a signal (e.g., data signal or clock signal) atthe Data_in port 310 through one or more circuits in the same die 110,and generate, at the IO_back port 350 and the IO_front port 360,replicate signals of the received signal.

FIG. 4 is a schematic diagram showing connections of die-to-dieinterface circuits 150A, 150B, 150C, in accordance with someembodiments. In some embodiments, the interface circuit 150A correspondsto the interface circuit 150 of the die 110A, the interface circuit 150Bcorresponds to the interface circuit 150 of the die 110B, and theinterface circuit 150C corresponds to the interface circuit 150 of thedie 110C. In one configuration, the interface circuit 150A includesports 360AA-360AD connected to ports 350BA . . . 350BD of the interfacecircuit 150B, respectively, through metal rails (e.g., metal rails 135,155) extending along the Y-direction. In one configuration, theinterface circuit 150B includes ports 360BA-360BD connected to ports350CA . . . 350CD of the interface circuit 150C, respectively, throughmetal rails (e.g., metal rails 135, 155) extending along theY-direction. In this configuration, interface circuits 150A, 150B, 150Cmay exchange data in a synchronous manner.

In one configuration, the interface circuit 150B may transmit or providea data signal and a clock signal to the interface circuits 150A, 150C.In one implementation, the interface circuit 150B includes buffercircuits 410B, 430B, and a flip flop 420B. The buffer circuit 430B mayreceive a clock signal from a circuit within the die 110B, and generate,at the ports 350BB, 360BB, replicate clock signals of the received clocksignal. The buffer circuit 430B may also transmit or output a replicateclock signal of the clock signal to a clock port of the flip flop 420B.The flip flop 420B may receive a data signal at a “D” input port, forexample, from a circuit within the die 110B, and output the data signalat the “Q” output port, in synchronous to the replicate clock signal atthe clock port. For example, the flip flop 420B may output, at the “Q”output port, the data signal received at the “D” input port, in responseto a rising edge of the replicate clock signal at the clock port. Thebuffer circuit 410B may receive the data signal from the “Q” output portof the flip flop 420B, and generate, at the ports 350BA, 360BA,replicate data signals of the data signal.

In one configuration, the interface circuit 150A may receive a datasignal and a clock signal from the interface circuit 150B. In oneimplementation, the interface circuit 150A includes buffer circuits410A, 430A, and a flip flop 420A. The buffer circuit 410A may receivethe replicate data signal from the buffer circuit 410B through the port360AA, and generate another replicate data signal of the replicate datasignal. The buffer circuit 410A may transmit or output the anotherreplicate data signal to a “D” input port of the flip flop 420A.Meanwhile, the buffer circuit 430A may receive a replicate clock signalfrom the buffer circuit 430B through the port 360AB, and generateanother replicate clock signal of the received clock signal. The buffercircuit 430A may also transmit or output the another replicate clocksignal to a clock port of the flip flop 420A. The flip flop 420A mayreceive the another replicate data signal at the “D” input port, andoutput or store the another replicate data signal at the “Q” outputport, in synchronous to the another replicate clock signal at the clockport. For example, the flip flop 420A may store or output, at the “Q”output port, the another replicate data signal received at the “D” inputport, in response to a rising edge of the another replicate clock signalat the clock port.

In one configuration, the interface circuit 150C may receive a datasignal and a clock signal from the interface circuit 150B at the ports350CA, 350CB. In one implementation, the interface circuit 150C includesbuffer circuits 410C, 430C, and a flip flop 420C. The buffer circuits410C, 430C, and the flip flop 420C may be configured and operate in asimilar manner as the buffer circuits 410A, 430A, and the flip flop 420Aof the interface circuit 150A. Thus, detailed description of duplicatedportion thereof is omitted herein for the sake of brevity.

In one configuration, the interface circuit 150A may transmit or providea data signal and a clock signal to the interface circuit 150B. In oneimplementation, the interface circuit 150A includes buffer circuits440A, 460A, and a flip flop 450A. The buffer circuit 440A may receive aclock signal from the buffer circuit 430A, and generate, at the port360AC, a replicate clock signal of the received clock signal. The buffercircuit 440A may also transmit or output a replicate clock signal to aclock port of the flip flop 450A. The flip flop 450A may receive a datasignal at a “D” input port, for example, from a circuit within the die110A, and output the data signal at the “Q” output port, in synchronousto the replicate clock signal at the clock port. For example, the flipflop 450A may output, at the “Q” output port, the data signal receivedat the “D” input port, in response to a rising edge of the replicateclock signal at the clock port. The buffer circuit 460A may receive thedata signal from the “Q” output port of the flip flop 450A, andgenerate, at the port 360AD, a replicate data signal of the data signal.

In one configuration, the interface circuit 150B may receive thereplicate data signal and the replicate clock signal from the interfacecircuit 150A. In one implementation, the interface circuit 150B includesbuffer circuits 440B, 460B, and a flip flop 450B. The buffer circuit460B may receive the replicate data signal from the buffer circuit 460Athrough the port 350BD and generate another replicate data signal of thereceived data signal. The buffer circuit 460B may transmit or output theanother replicate data signal to a “D” input port of the flip flop 450B.Meanwhile, the buffer circuit 440B may receive a replicate clock signalfrom the buffer circuit 440A through the port 350BC and generate anotherreplicate clock signal of the received clock signal. The buffer circuit440B may also transmit or output the another replicate clock signal to aclock port of the flip flop 450B. The flip flop 450B may receive theanother replicate data signal at the “D” input port, and output or storethe another replicate data signal at the “Q” output port, in synchronousto the another replicate clock signal at the clock port. For example,the flip flop 450B may store or output, at the “Q” output port, theanother replicate data signal received at the “D” input port, inresponse to a rising edge of the another replicate clock signal at theclock port. The buffer circuit 460B may also generate an additionalreplicate data signal of the replicate data signal received and transmitor output the additional replicate data signal at the port 360BD.Similarly, the buffer circuit 440B may generate an additional replicateclock signal of the replicate clock signal received and transmit oroutput the additional replicate clock signal at the port 360BC.

In one configuration, the interface circuit 150C may receive a datasignal and a clock signal from the interface circuit 150B at the ports350CC, 350CD. In one implementation, the interface circuit 150C includesbuffer circuits 440C, 460C, and a flip flop 450C. The buffer circuits440C, 460C, and the flip flop 450C may be configured and operate in asimilar manner as the buffer circuits 440B, 460B, and the flip flop 450Bof the interface circuit 150B. Thus, detailed description of duplicatedportion thereof is omitted herein for the sake of brevity.

Advantageously, the interface circuits 150A, 150B, 150C may communicateamong each other in a synchronous manner. As described above, the clocksignal can be shared or propagated among different interface circuits150A, 150B, 150C through the buffer circuits 430A-430C, and 440A-440C.Moreover, a data signal in synchronous to the clock signal can betransmitted by the buffer circuit 410B, and received by the buffercircuits 410A, 410C. In addition, a data signal in synchronous to theclock signal can be transmitted by the buffer circuit 460A, and receivedby the buffer circuits 460BA, 460C. Accordingly, the interface circuits150A, 150B, 150C may share synchronous data among each other.

FIG. 5 is a flowchart showing a method 500 of propagating a signalthrough multiple dies stacked along a direction, in accordance with someembodiments. In some embodiments, the method 500 is performed by theinterface circuit 150B of the die 110B. In some embodiments, the method500 is performed by other entities. In some embodiments, the method 500includes more, fewer, or different operations than shown in FIG. 5.

In an operation 510, the interface circuit 150B receives a signal froman interface circuit 150A of a preceding die 110A. The signal may be adata signal or a clock signal. The interface circuit 150B may receivethe signal through a vertical metal rail, for example, extending alongthe Y-direction. The vertical metal rail may be the metal rail 135.

In an operation 520, the interface circuit 150B generates a replicatesignal of the signal received. The replicate signal may contain the sameinformation as the received signal but may be delayed from the receivedsignal by a certain amount. For example, a voltage or a logic state ofthe replicate signal may be same as a voltage or a logic state of thereceived signal.

In an operation 530, the interface circuit 150B transmits the replicatesignal to an interface circuit 150C of a subsequent die 110C. Theinterface circuit 150B may transmit the signal through another verticalmetal rail, for example, extending along the Y-direction. The anothervertical metal rail may be the metal rail 155.

Advantageously, the interface circuits 150 in different dies 110 maypropagate or exchange a signal in a time efficient manner. In oneaspect, the interface circuit 150 of a die 110 can electrically isolatebetween electrical loads of different metal rails 135, 155 of the die110. Accordingly, the interface circuit 150B may drive metal rails 135,155 rather than a large number of metal rails in different dies 110stacked along the Y-direction. Accordingly, capacitive load of theinterface circuits 150 can be reduced to achieve speed improvement.

FIG. 6 is a diagram showing a system 600 to generate an integratedcircuit, in accordance with some embodiments. In some embodiments, thesystem 600 includes a device 610 that provides an integrated circuit(IC) layout design 630 (also referred to as “layout design 630” herein)to a fabrication facility 690, for example through a network connection.The device 610 may be a computing device operated by a user (or acircuit designer). The layout design 630 may indicate locations andsizes of a set of polygons corresponding to various structures of IC.The layout design 630 may be in GDSII format. The fabrication facility690 may receive the layout design 630 and fabricate multiple ICsaccording to the layout design 630.

In some embodiments, the device 610 includes one or more processors 615and a non-transitory computer readable medium 620 storing instructionswhen executed by the one or more processors 615 cause the one or moreprocessors 615 to perform various processes or operations for generatingthe layout design 630. In some embodiments, the non-transitory computerreadable medium 620 stores software applications including a circuitsimulator 650, a model generator 660, and a layout generator 675. Theseapplications may assist a user of the device 610 to generate the layoutdesign 630. In some embodiments, the non-transitory computer readablemedium 620 stores more, fewer, or different applications than shown inFIG. 6.

In some embodiments, the simulator 650 is a software application tosimulate or predict a performance a circuit design. The simulator 650may simulate the performance of the circuit design in response tovarious conditions applied. For example, the simulator 650 may performtransient simulations of a die across various process corners. Examplesof process corners include slow corner, worst corner, fast corner, bestcorner, etc. In one aspect, circuits located in different corners of thesame die may have different characteristics, according to processvariations. By performing simulations across different process corners,reliability of circuits can be tested to improve yield. The simulator650 may perform simulation on a gate level design, a logic level design,or a combination of them. Based on the simulation result, the user mayadjust or modify the gate level design or the logic level design of theintegrated circuit.

In some embodiments, the model generator 660 is a software applicationto generate a timing model of a die of the integrated circuit. In oneapproach, the model generator 660 can combine or aggregate simulationresults of a die across various process corners. The timing model of thedie allows the simulator 650 to perform simulation of multiple diesstacked along a direction (e.g., Y-direction) in an efficient manner asdescribed below with respect to FIGS. 7 through 8.

In some embodiments, the layout generator 675 is a software applicationfor generating the layout design 630. In one aspect, the layoutgenerator 675 provides a graphical user interface that allows a user todraw or define locations and sizes of polygons corresponding to variouslayout components. In one aspect, the layout generator 675 canautomatically generate the layout design 630 based on the logic leveldesign or the gate level design. The layout generator 675 may generatethe layout design 630 in GDSII format.

FIG. 7 is a flowchart showing a method 700 of simulating an integratedcircuit (e.g., integrated circuit 100) including multiple dies 110stacked along a direction, in accordance with some embodiments. Themethod 700 may be performed by the device 610 of FIG. 6. In someembodiments, the method 700 is performed by other entities. In someembodiments, the method 700 includes more, fewer, or differentoperations than shown in FIG. 7.

In an operation 710, the device 610 performs simulations for a singledie across varying process corners. For example, the simulator 650 mayperform transient simulations of signals propagated from one end of themetal rail 135 to another end of the metal rail 155 under differentoperating conditions (or different process corners).

In an operation 720, the device 610 generates a timing model for thesingle die according to the simulation results from the operation 710.In one aspect, the timing model can represent predicted performancessignals propagated from one end of the metal rail 135 to another end ofthe metal rail 155 under different operating conditions (or differentprocess corners). For example, the model generator 660 can combine oraggregate different simulation results performed under differentoperating conditions (or different process corners) to generate thetiming model.

In an operation 730, the device 610 performs simulation for multipledies stacked along a direction (e.g., Y-direction) according to thetiming model. For example, the model generator 660 may generatereplicates of the timing model of the single die. The replicates of thetiming model may be in cascade. Each of the replicates may represent acorresponding die 110. The simulator 650 may perform simulations of theintegrated circuit 100 according to the replicates of the timing modelin cascade. For example, the simulator 650 may perform timing analysisof a signal propagated from a first die (e.g., die 110A) to a last die(e.g., die 110C) through interface circuits 150 and metal rails 135, 155of multiple dies 110 based on the replicates of the timing model.According to the simulation performed in the operation 730, a circuitdesign may be modified, and a layout design 630 describing or indicatinglocations and shapes of various components of the circuit design can begenerated.

Advantageously, the device 610 can perform simulations of the integratedcircuit including multiple dies 110 stacked along a direction (e.g.,Y-direction) in an efficient manner. In one aspect, electrical loads ofmetal rails 135, 155 of multiple dies 110 are electrically isolated orseparated among each other through interface circuits 150 of themultiple dies 110, such that each die 110 can be modeled independently.Hence, circuit simulation of a single die 110 can be performed forvarious process corners to generate a timing model, and the timing modelcan be applied or utilized for performing circuit simulation of multipledies 110 stacked along the direction (e.g., Y-direction). By performingcircuit simulation of multiple dies 110 based on the timing model of thesingle die 110 rather than performing exhaustive circuit simulation ofmultiple dies 110 across various process corners, computationalresources (e.g., storage space and processing power) for performingcircuit simulation can be conserved.

FIG. 8A is a diagram showing multiple simulation results 810A, 810B,810C of a single die 110 across different process corners, in accordancewith some embodiments. In one example, the simulator 650 can performtransient simulations of signals propagated from an end of the metalrail 135 to an end of the metal rail 155, across various processcorners. For example, the simulation result 810A is a result of thetransient simulation under a slow corner for a cell (or transistor) anda worst corner for a parasitic capacitance of a wire. For example, thesimulation result 810B is a result of the transient simulation under aslow corner for a cell (or transistor) and a best corner for a parasiticresistance of a wire. For example, the simulation result 810C is aresult of the transient simulation under a fast corner for a cell (ortransistor) and a best corner for a parasitic capacitance of a wire.

FIG. 8B is a diagram showing a timing model 820 including multiplesimulation results of a single die, in accordance with some embodiments.In one example, the model generator 660 may combine the simulationresults 810A, 810B, 810C to generate the timing model 820.

FIG. 8C is a diagram showing timing models 820A, 820B, 820C in cascadeto simulate multiple dies 110A, 110B, 110C stacked along the direction(e.g., Y-direction), in accordance with some embodiments. The modelgenerator 660 may generate replicates 820A, 820B, 820C of the timingmodel 810 of the single die 110. The replicates 820A, 820B, 820C of thetiming model 810 may be in cascade. Each of the replicates 820A, 820B,820C may represent a corresponding die 110. The simulator 650 mayperform simulations of the integrated circuit 100 according to thereplicates 820A, 820B, 820C of the timing model 810 in cascade. Forexample, the simulator 650 may perform timing analysis of a signalpropagated from a first die (e.g., die 110A) to a last die (e.g., die110C) through interface circuits 150 and metal rails 135, 155 ofmultiple dies 110 based on the replicates 820A, 820B, 820C of the timingmodel 810.

In one aspect, electrical loads of metal rails 135, 155 of multiple dies110 are electrically isolated or separated among each other throughinterface circuits 150 of the multiple dies 110, such that each die 110can be modeled independently. Hence, circuit simulation of a single die110 can be performed for various process corners to generate the timingmodel 810, and replicates 820A, 820B, 820C of the timing model 810 canbe generated to perform circuit simulation of multiple dies 110 stackedalong the direction (e.g., Y-direction). By performing circuitsimulation of multiple dies 110 based on replicates 820A, 820B, 820C ofthe timing model 810 rather than performing exhaustive circuitsimulation of multiple dies 110 across various process corners,computational resources (e.g., storage space and processing power) forperforming circuit simulation can be conserved.

FIG. 9 is a flowchart of a method 900 of forming or manufacturing anintegrated circuit in accordance with some embodiments. It is understoodthat additional operations may be performed before, during, and/or afterthe method 900 depicted in FIG. 9. In some embodiments, the method 900is usable to form an integrated circuit according to various layoutdesigns as disclosed herein.

In operation 910 of the method 900, a layout design of an integratedcircuit is generated. The operation 910 is performed by a processingdevice (e.g., processor 615 of FIG. 6 or processor 1002 of FIG. 10)configured to execute instructions for generating a layout design. Inone approach, the layout design is generated by placing layout designsof one or more standard cells through a user interface. In one approach,the layout design is automatically generated by a processor executing asynthesis tool that converts a logic design (e.g., Verilog) into acorresponding layout design. In some embodiments, the layout design isrendered in a graphic database system (GDSII) file format.

In operation 920 of the method 900, the integrated circuit ismanufactured based on the layout design. In some embodiments, theoperation 920 of the method 900 comprises manufacturing one or moremasks based on the layout design, and manufacturing the integratedcircuit based on the one or more masks. In one approach, the operation920 includes operations 930, 935, 940.

In one approach, the operation 930 of the method 900 includes forming afirst die (e.g., 110C) including a first layer (e.g., front layer 120C)and a second layer (e.g., back layer 115C). The first layer may be aninsulating layer, and the second layer may be a semiconductor layer. Thesecond layer may be formed or disposed above a direction (e.g.,Y-direction). In some embodiments, the operation 930 includes formingmetal rails through the first layer and the second layer. In oneapproach, a first metal rail (e.g., metal rail 155C) extends through thefirst layer along the direction (e.g., Y-direction), and a second metalrail (e.g., metal rail 135C) extends through the second layer along thedirection (e.g., Y-direction). In some embodiments, the operation 930includes forming a first interface circuit (e.g., interface circuit150C) in the second layer. The first interface circuit may be configuredto propagate a signal between the first metal rail and the second metalrail, while electrically separating between an electrical load of thefirst metal rail and an electrical load of the second metal rail.

In one approach, the operation 935 of the method 900 includes forming asecond die (e.g., 110B) including a third layer (e.g., front layer 120B)and a fourth layer (e.g., back layer 115B). The third layer may be aninsulating layer, and the fourth layer may be a semiconductor layer. Thefourth layer may be formed or disposed above the direction (e.g.,Y-direction). In some embodiments, the operation 935 includes formingmetal rails through the third layer and the fourth layer. In oneapproach, a third metal rail (e.g., metal rail 155B) extends through thethird layer along the direction (e.g., Y-direction), and a fourth metalrail (e.g., metal rail 135B) extends through the fourth layer along thedirection (e.g., Y-direction). In one approach, a conductive bump (e.g.,conductive bump 165BC) may be formed between the first die and thesecond die to electrically couple between the second metal rail and thethird metal rail. In some embodiments, the operation 935 includesforming a second interface circuit (e.g., interface circuit 150B) in thefourth layer. The second interface circuit may be configured to receivethe signal from the first interface circuit, and propagate the signalbetween the third metal rail and the fourth metal rail, whileelectrically separating between an electrical load of the third metalrail and an electrical load of the fourth metal rail.

In one approach, the operation 940 of the method 900 includes forming athird die (e.g., 110A) including a fifth layer (e.g., front layer 120A)and a sixth layer (e.g., back layer 115A). The fifth layer may be aninsulating layer, and the sixth layer may be a semiconductor layer. Thesixth layer may be formed or disposed above the direction (e.g.,Y-direction). In some embodiments, the operation 940 includes formingmetal rails through the fifth layer and the sixth layer. In oneapproach, a fifth metal rail (e.g., metal rail 155A) extends through thefifth layer along the direction (e.g., Y-direction), and a sixth metalrail (e.g., metal rail 135A) extends through the sixth layer along thedirection (e.g., Y-direction). In one approach, a conductive bump (e.g.,conductive bump 165AB) may be formed between the second die and thethird die to electrically couple between the fourth metal rail and thefifth metal rail. In some embodiments, the operation 940 includesforming a third interface circuit (e.g., interface circuit 150A) in thesixth layer. The third interface circuit may be configured to receivethe signal from the second interface circuit, and propagate the signalbetween the fifth metal rail and the sixth metal rail, whileelectrically separating between an electrical load of the fifth metalrail and an electrical load of the sixth metal rail.

Advantageously, the integrated circuit formed according to the method900 can achieve speed improvement. By employing interface circuits togenerate a replicate signal to transmit to a subsequent die whileelectrically isolating or separating electrical loads of metal rails indifferent dies, capacitive loading of metal rails through multiple diescan be reduced. By reducing the capacitive loading, speed ofcommunication among different dies of the integrated circuit can beenhanced.

FIG. 10 is a schematic view of a system 1000 for designing andmanufacturing an IC layout design in accordance with some embodiments.In some embodiments, the system 1000 generates or places one or more IClayout designs described herein. In some embodiments, the system 1000manufactures one or more ICs based on the one or more IC layout designsdescribed herein. The system 1000 includes a hardware processor 1002 anda non-transitory, computer readable storage medium 1004 encoded with,e.g., storing, the computer program code 1006, e.g., a set of executableinstructions. Computer readable storage medium 1004 is configured forinterfacing with manufacturing machines for producing the integratedcircuit. The processor 1002 is electrically coupled to the computerreadable storage medium 1004 by a bus 1008. The processor 1002 is alsoelectrically coupled to an I/O interface 1010 by the bus 1008. A networkinterface 1012 is also electrically connected to the processor 1002 bythe bus 1008. Network interface 1012 is connected to a network 1014, sothat processor 1002 and computer readable storage medium 1004 arecapable of connecting to external elements via network 1014. Theprocessor 1002 is configured to execute the computer program code 1006encoded in the computer readable storage medium 1004 in order to causesystem 1000 to be usable for performing a portion or all of theoperations as described in method 1000.

In some embodiments, the processor 1002 is a central processing unit(CPU), a multi-processor, a distributed processing system, anapplication specific integrated circuit (ASIC), and/or a suitableprocessing unit.

In some embodiments, the computer readable storage medium 1004 is anelectronic, magnetic, optical, electromagnetic, infrared, and/or asemiconductor system (or apparatus or device). For example, the computerreadable storage medium 1004 includes a semiconductor or solid-statememory, a magnetic tape, a removable computer diskette, a random accessmemory (RAM), a read-only memory (ROM), a rigid magnetic disk, and/or anoptical disk. In some embodiments using optical disks, the computerreadable storage medium 1004 includes a compact disk-read only memory(CD-ROM), a compact disk-read/write (CD-R/W), and/or a digital videodisc (DVD).

In some embodiments, the storage medium 1004 stores the computer programcode 1006 configured to cause system 1000 to perform method 900. In someembodiments, the storage medium 1004 also stores information needed forperforming method 900 as well as information generated duringperformance of method 900, such as layout design 1016 and user interface1018 and fabrication unit 1020, and/or a set of executable instructionsto perform the operation of method 900.

In some embodiments, the storage medium 1004 stores instructions (e.g.,computer program code 1006) for interfacing with manufacturing machines.The instructions (e.g., computer program code 1006) enable processor1002 to generate manufacturing instructions readable by themanufacturing machines to effectively implement method 900 during amanufacturing process.

System 1000 includes I/O interface 1010. I/O interface 1010 is coupledto external circuitry. In some embodiments, I/O interface 1010 includesa keyboard, keypad, mouse, trackball, trackpad, and/or cursor directionkeys for communicating information and commands to processor 1002.

System 1000 also includes network interface 1012 coupled to theprocessor 1002. Network interface 1012 allows system 1000 to communicatewith network 1014, to which one or more other computer systems areconnected. Network interface 1012 includes wireless network interfacessuch as BLUETOOTH, WIFI, WIMAX, GPRS, or WCDMA; or wired networkinterface such as ETHERNET, USB, or IEEE-13154. In some embodiments,method 900 is implemented in two or more systems 1000, and informationsuch as layout design, user interface and fabrication unit are exchangedbetween different systems 1000 by network 1014.

System 1000 is configured to receive information related to a layoutdesign through I/O interface 1010 or network interface 1012. Theinformation is transferred to processor 1002 by bus 1008 to determine alayout design for producing an IC. The layout design is then stored incomputer readable medium 1004 as layout design 1016. System 1000 isconfigured to receive information related to a user interface throughI/O interface 1010 or network interface 1012. The information is storedin computer readable medium 1004 as user interface 1018. System 1000 isconfigured to receive information related to a fabrication unit throughI/O interface 1010 or network interface 1012. The information is storedin computer readable medium 1004 as fabrication unit 1020. In someembodiments, the fabrication unit 1020 includes fabrication informationutilized by system 1000.

In some embodiments, the method 900 is implemented as a standalonesoftware application for execution by a processor. In some embodiments,the method 900 is implemented as a software application that is a partof an additional software application. In some embodiments, the method900 is implemented as a plug-in to a software application. In someembodiments, the method 900 is implemented as a software applicationthat is a portion of an EDA tool. In some embodiments, the method 900 isimplemented as a software application that is used by an EDA tool. Insome embodiments, the EDA tool is used to generate a layout design ofthe integrated circuit device. In some embodiments, the layout design isstored on a non-transitory computer readable medium. In someembodiments, the layout design is generated using a tool such asVIRTUOSO® available from CADENCE DESIGN SYSTEMS, Inc., or anothersuitable layout generating tool. In some embodiments, the layout designis generated based on a netlist which is created based on the schematicdesign. In some embodiments, the method 900 is implemented by amanufacturing device to manufacture an integrated circuit using a set ofmasks manufactured based on one or more layout designs generated by thesystem 1000. In some embodiments, system 1000 is a manufacturing device(e.g., fabrication tool 1022) to manufacture an integrated circuit usinga set of masks manufactured based on one or more layout designs of thepresent disclosure. In some embodiments, system 1000 of FIG. 10generates layout designs of an IC that are smaller than otherapproaches. In some embodiments, system 1000 of FIG. 10 generates layoutdesigns of an IC that occupy less area than other approaches.

FIG. 11 is a block diagram of an integrated circuit (IC) manufacturingsystem 1100, and an IC manufacturing flow associated therewith, inaccordance with at least one embodiment of the present disclosure.

In FIG. 11, IC manufacturing system 1100 includes entities, such as adesign house 1120, a mask house 1130, and an IC manufacturer/fabricator(“fab”) 1140, that interact with one another in the design, development,and manufacturing cycles and/or services related to manufacturing an ICdevice 1160. The entities in system 1100 are connected by acommunications network. In some embodiments, the communications networkis a single network. In some embodiments, the communications network isa variety of different networks, such as an intranet and the Internet.The communications network includes wired and/or wireless communicationchannels. Each entity interacts with one or more of the other entitiesand provides services to and/or receives services from one or more ofthe other entities. In some embodiments, two or more of design house1120, mask house 1130, and IC fab 1140 is owned by a single company. Insome embodiments, two or more of design house 1120, mask house 1130, andIC fab 1140 coexist in a common facility and use common resources.

Design house (or design team) 1120 generates an IC design layout 1122.IC design layout 1122 includes various geometrical patterns designed foran IC device 1160. The geometrical patterns correspond to patterns ofmetal, oxide, or semiconductor layers that make up the variouscomponents of IC device 1160 to be fabricated. The various layerscombine to form various IC features. For example, a portion of IC designlayout 1122 includes various IC features, such as an active region, gateregion, source region and drain region, metal lines or via contacts ofan interlayer interconnection, and openings for bonding pads, to beformed in a semiconductor substrate (such as a silicon wafer) andvarious material layers disposed on the semiconductor substrate. Designhouse 1120 implements a proper design procedure to form IC design layout1122. The design procedure includes one or more of logic design,physical design or place and route. IC design layout 1122 is presentedin one or more data files having information of the geometricalpatterns. For example, IC design layout 1122 can be expressed in a GDSIIfile format or DFII file format.

Mask house 1130 includes mask data preparation 1132 and mask fabrication1134. Mask house 1130 uses IC design layout 1122 to manufacture one ormore masks to be used for fabricating the various layers of IC device1160 according to IC design layout 1122. Mask house 1130 performs maskdata preparation 1132, where IC design layout 1122 is translated into arepresentative data file (“RDF”). Mask data preparation 1132 providesthe RDF to mask fabrication 1134. Mask fabrication 1134 includes a maskwriter. A mask writer converts the RDF to an image on a substrate, suchas a mask (reticle) or a semiconductor wafer. The design layout ismanipulated by mask data preparation 1132 to comply with particularcharacteristics of the mask writer and/or requirements of IC fab 1140.In FIG. 11, mask data preparation 1132 and mask fabrication 1134 areillustrated as separate elements. In some embodiments, mask datapreparation 1132 and mask fabrication 1134 can be collectively referredto as mask data preparation.

In some embodiments, mask data preparation 1132 includes opticalproximity correction (OPC) which uses lithography enhancement techniquesto compensate for image errors, such as those that can arise fromdiffraction, interference, other process effects and the like. OPCadjusts IC design layout 1122. In some embodiments, mask datapreparation 1132 includes further resolution enhancement techniques(RET), such as off-axis illumination, sub-resolution assist features,phase-shifting masks, other suitable techniques, and the like orcombinations thereof. In some embodiments, inverse lithographytechnology (ILT) is also used, which treats OPC as an inverse imagingproblem.

In some embodiments, mask data preparation 1132 includes a mask rulechecker (MRC) that checks the IC design layout that has undergoneprocesses in OPC with a set of mask creation rules which contain certaingeometric and/or connectivity restrictions to ensure sufficient margins,to account for variability in semiconductor manufacturing processes, andthe like. In some embodiments, the MRC modifies the IC design layout tocompensate for limitations during mask fabrication 1134, which may undopart of the modifications performed by OPC in order to meet maskcreation rules.

In some embodiments, mask data preparation 1132 includes lithographyprocess checking (LPC) that simulates processing that will beimplemented by IC fab 1140 to fabricate IC device 1160. LPC simulatesthis processing based on IC design layout 1122 to create a simulatedmanufactured device, such as IC device 1160. The processing parametersin LPC simulation can include parameters associated with variousprocesses of the IC manufacturing cycle, parameters associated withtools used for manufacturing the IC, and/or other aspects of themanufacturing process. LPC takes into account various factors, such asaerial image contrast, depth of focus (“DOF”), mask error enhancementfactor (“MEEF”), other suitable factors, and the like or combinationsthereof. In some embodiments, after a simulated manufactured device hasbeen created by LPC, if the simulated device is not close enough inshape to satisfy design rules, OPC and/or MRC can be repeated to furtherrefine IC design layout 1122.

It should be understood that the above description of mask datapreparation 1132 has been simplified for the purposes of clarity. Insome embodiments, mask data preparation 1132 includes additionalfeatures such as a logic operation (LOP) to modify the IC design layoutaccording to manufacturing rules. Additionally, the processes applied toIC design layout 1122 during mask data preparation 1132 may be executedin a variety of different orders.

After mask data preparation 1132 and during mask fabrication 1134, amask or a group of masks are fabricated based on the modified IC designlayout. In some embodiments, an electron-beam (e-beam) or a mechanism ofmultiple e-beams is used to form a pattern on a mask (photomask orreticle) based on the modified IC design layout. The mask can be formedin various technologies. In some embodiments, the mask is formed usingbinary technology. In some embodiments, a mask pattern includes opaqueregions and transparent regions. A radiation beam, such as anultraviolet (UV) beam, used to expose the image sensitive material layer(e.g., photoresist) which has been coated on a wafer, is blocked by theopaque region and transmits through the transparent regions. In oneexample, a binary mask includes a transparent substrate (e.g., fusedquartz) and an opaque material (e.g., chromium) coated in the opaqueregions of the mask. In another example, the mask is formed using aphase shift technology. In the phase shift mask (PSM), various featuresin the pattern formed on the mask are configured to have proper phasedifference to enhance the resolution and imaging quality. In variousexamples, the phase shift mask can be attenuated PSM or alternating PSM.The mask(s) generated by mask fabrication 1134 is used in a variety ofprocesses. For example, such a mask(s) is used in an ion implantationprocess to form various doped regions in the semiconductor wafer, in anetching process to form various etching regions in the semiconductorwafer, and/or in other suitable processes.

IC fab 1140 is an IC fabrication entity that includes one or moremanufacturing facilities for the fabrication of a variety of differentIC products. In some embodiments, IC fab 1140 is a semiconductorfoundry. For example, there may be a manufacturing facility for thefront end fabrication of a plurality of IC products (front-end-of-line(FEOL) fabrication), while a second manufacturing facility may providethe back end fabrication for the interconnection and packaging of the ICproducts (back-end-of-line (BEOL) fabrication), and a thirdmanufacturing facility may provide other services for the foundryentity.

IC fab 1140 uses the mask (or masks) fabricated by mask house 1130 tofabricate IC device 1160. Thus, IC fab 1140 at least indirectly uses ICdesign layout 1122 to fabricate IC device 1160. In some embodiments, asemiconductor wafer 1142 is fabricated by IC fab 1140 using the mask (ormasks) to form IC device 1160. Semiconductor wafer 1142 includes asilicon substrate or other proper substrate having material layersformed thereon. Semiconductor wafer further includes one or more ofvarious doped regions, dielectric features, multilevel interconnects,and the like (formed at subsequent manufacturing steps).

System 1100 is shown as having design house 1120, mask house 1130 or ICfab 1140 as separate components or entities. However, it is understoodthat one or more of design house 1120, mask house 1130 or IC fab 1140are part of the same component or entity.

Details regarding an integrated circuit (IC) manufacturing system (e.g.,system 1100 of FIG. 11), and an IC manufacturing flow associatedtherewith are found, e.g., in U.S. Pat. No. 9,256,709, granted Feb. 9,2016, U.S. Patent Application Publication No. 20150278429, publishedOct. 1, 2015, U.S. Patent Application Publication No. 20100040838,published Feb. 6, 2014, and U.S. Pat. No. 7,260,442, granted Aug. 21,2007, the entireties of each of which are hereby incorporated byreference.

One aspect of this description relates to an integrated circuit. In someembodiments, the integrated circuit includes a first die and a seconddie disposed above the first die along a direction. In some embodiments,the second die includes a first layer and a second layer disposed abovethe first layer along the direction. In some embodiments, the second dieincludes a first metal rail extending through the first layer along thedirection to electrically couple to the first die, and a second metalrail extending through the second layer along the direction. In someembodiments, the second die includes a first interface circuit disposedin the second layer. In some embodiments, the first interface circuit isconfigured to propagate a signal between the first metal rail and thesecond metal rail, while electrically isolating between electrical loadsof the first metal rail and the second metal rail.

One aspect of this description relates to an integrated circuitincluding a first die, a second die, and a third die stacked along adirection. In some embodiments, the first die includes a first interfacecircuit to generate a signal. In some embodiments, the second die isdisposed above the first die along the direction. In some embodiments,the second die includes a second interface circuit to receive the signalfrom the first interface circuit and generate a replicate signalaccording to the signal. In some embodiments, the third die is disposedabove the second die along the direction. In some embodiments, the thirddie includes a third interface circuit to receive the replicate signalfrom the second interface circuit.

One aspect of this description relates to a method of generating alayout design of an integrated circuit. In some embodiments, the methodincludes performing, by a processor, a first simulation for a die of theintegrated circuit across process corners. In some embodiments, themethod includes generating, by the processor, a timing model of the dieaccording to the first simulation. In some embodiments, the methodincludes performing, by the processor, a second simulation for multipledies of the integrated circuit stacked along a direction. Each of themultiple dies may be represented by the timing model. In someembodiments, the method includes generating, by the processor, thelayout design of the integrated circuit including the multiple diesstacked along the direction based on the second simulation.

One aspect of this description relates to a method of forming anintegrated circuit. In some embodiments, the method includes forming afirst layer of a first die. In some embodiments, the method includesforming a first metal rail extending through the first layer along adirection. In some embodiments, the method includes forming a secondlayer of the first die along the direction. In some embodiments, themethod includes forming a second metal rail extending through the secondlayer along the direction. In some embodiments, the method includesforming a first interface circuit in the second layer. In someembodiments, the first interface circuit is configured to propagate asignal between the first metal rail and the second metal rail, whileelectrically separating between an electrical load of the first metalrail and an electrical load of the second metal rail. In someembodiments, the method includes forming a third layer of a second die.In some embodiments, the method includes forming a third metal railextending through the third layer along the direction. In someembodiments, the method includes forming a fourth layer of the seconddie along the direction. In some embodiments, the method includesforming a second interface circuit in the fourth layer. In someembodiments, the second interface circuit is configured to receive thesignal from the first interface circuit through the third metal rail.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. An integrated circuit comprising: a first die;and a second die disposed above the first die along a direction, thesecond die including: a first layer, a second layer disposed above thefirst layer along the direction, a first metal rail extending throughthe first layer along the direction to electrically couple to the firstdie, a second metal rail extending through the second layer along thedirection, and a first interface circuit disposed in the second layer,the first interface circuit to propagate a signal between the firstmetal rail and the second metal rail, while electrically separatingbetween an electrical load of the first metal rail and an electricalload of the second metal rail.
 2. The integrated circuit of claim 1,wherein the first die includes: a third layer, a fourth layer disposedabove the third layer along the direction, a third metal rail extendingthrough the third layer along the direction, and a fourth metal railextending through the fourth layer along the direction, the fourth metalrail electrically coupled to the first metal rail.
 3. The integratedcircuit of claim 2, further comprising: a conductive bump toelectrically couple between the fourth metal rail of the first die andthe first metal rail of the second die.
 4. The integrated circuit ofclaim 2, wherein the first layer and the third layer are insulatinglayers, and wherein the second layer and the fourth layer aresemiconductor layers.
 5. The integrated circuit of claim 2, wherein thefirst layer and the fourth layer are insulating layers, and wherein thesecond layer and the third layer are semiconductor layers.
 6. Theintegrated circuit of claim 2, wherein the second die includes: a secondinterface circuit disposed in the fourth layer, the second interfacecircuit to propagate a signal between the third metal rail and thefourth metal rail, while electrically separating between an electricalload of the third metal rail and an electrical load of the fourth metalrail, the second interface circuit of the first die electrically coupledto the first interface circuit of the second die through the first metalrail and the fourth metal rail.
 7. The integrated circuit of claim 6,wherein the signal is a data signal, wherein the first interface circuitincludes a buffer circuit to: receive the data signal through the secondmetal rail, generate a replicate data signal of the data signal, andtransmit the replicate data signal to the second interface circuitthrough the first metal rail and the fourth metal rail.
 8. Theintegrated circuit of claim 7, wherein the second die further includes afifth metal rail extending through the first layer along the directionto electrically couple to the first die, and wherein the first diefurther includes a sixth metal rail extending through the fourth layeralong the direction to electrically couple to the second die, whereinthe first interface circuit further includes another buffer circuit to:receive a clock signal, generate a replicate clock signal of the clocksignal, and transmit the replicate clock signal to the second interfacecircuit through the fifth metal rail and the sixth metal rail.
 9. Theintegrated circuit of claim 8, wherein the first interface circuitfurther includes a flip flop to: receive the replicate clock signal fromthe another buffer circuit, and generate the data signal in synchronousto the replicate clock signal.
 10. The integrated circuit of claim 6,further comprising: a third die including: a fifth layer, a sixth layerdisposed above the fifth layer along the direction, a fifth metal railextending through the fifth layer along the direction, a sixth metalrail extending through the sixth layer along the direction toelectrically couple to the second die, and a third interface circuit topropagate a signal between the fifth metal rail and the sixth metalrail, while electrically separating between an electrical load of thefifth metal rail and an electrical load of the sixth metal rail, thethird interface circuit of the third die electrically coupled to thesecond interface circuit of the second die through the third metal railand the fifth metal rail.
 11. An integrated circuit comprising: a firstdie including a first interface circuit, the first interface circuit togenerate a signal; a second die disposed above the first die along adirection, the second die including a second interface circuit toreceive the signal from the first interface circuit and generate areplicate signal of the signal; and a third die disposed above thesecond die along the direction, the third die including a thirdinterface circuit to receive the replicate signal from the secondinterface circuit.
 12. The integrated circuit of claim 11, wherein thesecond interface circuit is to: receive the signal from the firstinterface circuit through a first metal rail of the second die extendingalong the direction, and transmit the replicate signal to the thirdinterface circuit through a second metal rail of the second dieextending along the direction.
 13. The integrated circuit of claim 12,wherein the first metal rail extends through a semiconductor layer ofthe second die, and wherein the second metal rail extends through aninsulating layer of the second die.
 14. The integrated circuit of claim11, further comprising: a first conductive bump disposed between thefirst die and the second die, the second interface circuit to receivethe signal through the first conductive bump; and a second conductivebump disposed between the second die and the third die, the thirdinterface circuit to receive the replicate signal through the secondconductive bump.
 15. The integrated circuit of claim 11, wherein thethird interface circuit is to generate another replicate signal of thereplicate signal.
 16. A method comprising: forming a first layer of afirst die; forming a first metal rail extending through the first layeralong a direction; forming a second layer of the first die along thedirection; forming a second metal rail extending through the secondlayer along the direction; forming a first interface circuit in thesecond layer, wherein the first interface circuit is configured topropagate a signal between the first metal rail and the second metalrail, while electrically separating between an electrical load of thefirst metal rail and an electrical load of the second metal rail;forming a third layer of a second die above the first die along thedirection; forming a third metal rail extending through the third layeralong the direction; forming a fourth layer of the second die along thedirection; and forming a second interface circuit in the fourth layer,wherein the second interface circuit is configured to receive the signalfrom the first interface circuit through the third metal rail.
 17. Themethod of claim 16, further comprising: forming a conductive bumpbetween the first die and the second die to electrically couple betweenthe second metal rail and the third metal rail.
 18. The method of claim16, further comprising: forming a fourth metal rail through the fourthlayer along the direction, wherein the second interface circuit isconfigured to propagate the signal between the third metal rail and thefourth metal rail, while electrically separating between an electricalload of the third metal rail and an electrical load of the fourth metalrail.
 19. The method of claim 18, further comprising: forming a fifthlayer of a third die; forming a fifth metal rail extending through thefifth layer along the direction; forming a sixth layer of the third diealong the direction; and forming a third interface circuit in the sixthlayer, wherein the third interface circuit is configured to receive thesignal from the second interface circuit through the fifth metal rail.20. The method of claim 16, wherein the first layer and the third layerare insulating layers, wherein the second layer and the fourth layer aresemiconductor layers.